Nonvolatile memory cell without a dielectric antifuse having high- and low-impedance states

ABSTRACT

A memory cell according to the present invention comprises a bottom conductor, a doped semiconductor pillar, and a top conductor. The memory cell does not include a dielectric rupture antifuse separating the doped semiconductor pillar from either conductor, or within the semiconductor pillar. The memory cell is formed in a high-impedance state, in which little or no current flows between the conductors on application of a read voltage. Application of a programming voltage programs the cell, converting the memory cell from its initial high-impedance state to a low-impedance state. A monolithic three dimensional memory array of such cells can be formed, comprising multiple memory levels, the levels monolithically formed above one another.

RELATED APPLICATIONS

This application is a division of Herner et al., U.S. patent applicationSer. No. 10/955,549, “Nonvolatile Memory Cell Without a DielectricAntifuse Having High- and Low-Impedance States,” filed Sep. 29, 2004,which is a continuation-in-part of Herner et al., U.S. patentapplication Ser. No. 10/855,784, “An Improved Method for MakingHigh-Density Nonvolatile Memory,” filed May 26, 2004, now U.S. Pat. No.6,952,030, which is a continuation of Herner et al., U.S. patentapplication Ser. No. 10/326,470, “An Improved Method for MakingHigh-Density Nonvolatile Memory,” filed Dec. 19, 2002 (since abandoned)and hereinafter the '470 application, each of which is herebyincorporated by reference herein in its entirety.

This application is related to Herner et al., U.S. application Ser. No.10/954,577, “Junction Diode Comprising Varying SemiconductorCompositions,”, hereinafter the '577 application; to Herner et al., U.S.application Ser. No. 10/954,510, “Memory Cell Comprising a SemiconductorJunction Diode Crystallized Adjacent to a Silicide,”, hereinafter the'510 application; and to Petti et al., U.S. application Ser. No.10/955,387, “Fuse Memory Cell Comprising a Diode, the Diode Serving asthe Fuse Element,”; all assigned to the assignee of the presentinvention, all filed on even date herewith and all hereby incorporatedby reference in their entirety.

BACKGROUND OF THE INVENTION

The invention relates to a memory cell comprising a semiconductorpillar, the memory cell having a first high-impedance state and a secondlow-impedance state, corresponding to unprogrammed and programmedstates.

Some devices, as in Herner et al., U.S. patent application Ser. No.10/326,470, “An Improved Method for Making High Density NonvolatileMemory,” filed Dec. 19, 2002 and hereinafter the '470 application, whichis hereby incorporated by reference, employ a vertically orientedsemiconductor junction diode interposed between conductors, the diodeseparated from at least one of the conductors by a dielectric ruptureantifuse, or having a dielectric rupture antifuse interposed betweendiode portions.

Other ways of constituting a three dimensional array of programmablememory cells can advantageously be pursued, however.

SUMMARY OF THE PREFERRED EMBODIMENTS

The present invention is defined by the following claims, and nothing inthis section should be taken as a limitation on those claims. Ingeneral, the invention is directed to a memory cell comprising asemiconductor pillar, the memory cell having an unprogrammedhigh-impedance state and, after application of a programming voltage, aprogrammed low-impedance state.

A first aspect of the invention provides for a programmable memory cellcomprising a first conductor extending in a first direction; a verticalpillar consisting essentially of semiconductor material andconductivity-enhancing dopants and having a top surface and a bottomsurface; a second conductor above the first conductor extending in asecond direction different from the first direction, wherein thevertical pillar is disposed between the first and second conductors andwherein the top surface and the bottom surface are in electrical contactwith the first and second conductors, and wherein, before programming ofthe memory cell, an unprogrammed current flows between the conductorswhen a read voltage is applied and wherein, after programming of thememory cell, a programmed current flows between the conductors when thesame read voltage is applied, wherein a difference between theunprogrammed and programmed currents is sufficient for an unprogrammedstate and an programmed state of the memory cell to be reliablydistinguishable.

A related aspect of the invention provides for an array of memory cells,the array comprising: a plurality of substantially parallel,substantially coplanar first conductors extending in a first direction;a plurality of vertically oriented semiconductor pillars above and inelectrical contact with the first conductors, wherein the pillars do notcomprise a dielectric layer formed by deposition or a thermal or plasmaoxidation or nitridation process exceeding 100 degrees C.; and aplurality of substantially parallel, substantially coplanar secondconductors extending in a second direction different from the firstdirection, the second conductors above and in electrical contact withthe pillars, wherein the first and second conductors and the pillarsform a level of programmable memory cells disposed above a substrate.

A preferred embodiment of the invention provides for a monolithic threedimensional memory array, the array comprising: a) a first memory level,the first memory level comprising: i) a plurality of substantiallyparallel first conductors formed above a monocrystalline substrate; ii)a plurality of first vertical pillars consisting essentially ofsemiconductor material and conductivity-enhancing dopants, the firstpillars above and in electrical contact with the first conductors; andiii) a plurality of substantially parallel second conductors formedabove the first pillars, the first pillars in electrical contact withthe second conductors, wherein the first conductors, first pillars, andsecond conductors make up a first plurality of unprogrammed memorycells; and b) a second memory level monolithically formed above thefirst memory level.

Another aspect of the invention provides for a method for forming amemory cell, the method comprising forming a first elongate conductorhaving a top layer; forming a vertical polycrystalline or amorphouspillar, the pillar consisting essentially of semiconductor material andcomprising both an n-doped and a p-doped region, the pillar formed overand in electrical contact with the first conductor; and forming a secondconductor over the pillar, the second conductor having a bottom layer,wherein the pillar is in electrical contact with the second conductor,wherein the top layer of the first conductor does not comprisesemiconductor material and wherein the bottom layer of the secondconductor does not comprise semiconductor material.

Yet another preferred embodiment of the invention provides for a methodfor forming a memory cell, the method comprising: forming a firstconductor having a top layer; forming a layer stack consistingessentially of doped semiconductor material; patterning and etching thelayer stack to form a semiconductor pillar in electrical contact withthe top layer of the first conductor; forming a second conductor overthe pillar, the second conductor having a bottom layer, wherein thepillar is in electrical contact with the second conductor, wherein thetop layer of the first conductor does not comprise semiconductormaterial and wherein the bottom layer of the second conductor does notcomprise semiconductor material.

An aspect of the invention provides for a method for forming a memoryarray, the method comprising: forming a plurality of substantiallyparallel first conductors; depositing a layer stack consistingessentially of semiconductor material and conductivity-enhancingdopants; patterning and etching the layer stack of semiconductormaterial to form a plurality of first pillars, each first pillar inelectrical contact with a first conductor; and forming second conductorsabove the first pillars, each first pillar in electrical contact with asecond conductor, wherein the array so formed comprises programmablememory cells.

Another embodiment of the invention provides for a method for forming amonolithic three dimensional memory array, the method comprising:forming a plurality of substantially parallel first conductors extendingin a first direction; forming a plurality of first amorphous orpolycrystalline semiconductor pillars, wherein the first pillars do notcomprise a deposited dielectric layer and wherein the step of formingthe first pillars does not comprise a plasma or thermal oxidation ornitridation step performed at temperatures greater than about 100degrees C., and wherein each first pillar is above and in electricalcontact with one of the first conductors; forming a plurality ofsubstantially parallel second conductors over the first pillars, thesecond conductors extending in a second direction different from thefirst direction, each first pillar in electrical contact with at leastone second conductor; and forming a plurality of second semiconductorpillars, each second pillar above and in electrical contact with asecond conductor.

Yet another aspect of the invention provides for a programmable memorycell comprising: a first conductor extending in a first direction; avertical pillar consisting essentially of semiconductor material andconductivity-enhancing dopants and having a top surface and a bottomsurface; a second conductor above the first conductor extending in asecond direction different from the first direction, wherein thevertical pillar is disposed between the first and second conductors, andwherein, before programming of the memory cell, an unprogrammed currentflows between the conductors when a read voltage is applied and wherein,after programming of the memory cell, a programmed current flows betweenthe conductors when the same read voltage is applied, wherein adifference between the unprogrammed and programmed currents issufficient for an unprogrammed state and an programmed state of thememory cell to be reliably distinguishable.

Each of the aspects and embodiments of the invention described hereincan be used alone or in combination with one another.

The preferred aspects and embodiments will now be described withreference to the attached drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a perspective view of a memory cell comprising a verticallyoriented junction diode and a dielectric rupture antifuse disposedbetween top and bottom conductors.

FIG. 2 is a perspective view of a memory cell comprising a verticallyoriented junction diode having no dielectric rupture antifuse disposedbetween top and bottom conductors.

FIG. 3 is a probability plot showing unprogrammed and programmed currentin memory cells like those of FIG. 2.

FIG. 4 a is a cross-sectional view of fabrication of a prior art memorycell.

FIG. 4 b is a cross-sectional view of fabrication of a memory cellformed according to an embodiment of the present invention.

FIG. 5 is a graph showing current vs. voltage for a programmed and anunprogrammed memory cell.

FIGS. 6 a and 6 b are cross-sectional views showing fabrication of anarray of memory cells formed according to the present invention.

FIGS. 7 a-7 d are cross-sectional views showing preferred junctiondiodes for use in a memory cell.

FIG. 8 a is a perspective view of memory levels not sharing conductors,while FIG. 8 b is a cross-sectional view.

FIG. 9 a is a perspective view of memory levels sharing conductors,while FIG. 9 b is a cross-sectional view.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

A semiconductor junction diode, for example a p-n diode or a p-i-ndiode, has been paired with a dielectric rupture antifuse to form amemory cell, for example in the monolithic three dimensional memoryarray described in the '470 application.

A preferred memory cell of the '470 application includes a verticallyoriented junction diode disposed between conductors, the cell furtherhaving a dielectric rupture antifuse interposed between the junctiondiode and one of the conductors. A memory cell 2 according to the '470application is shown in FIG. 1. A first conductor 20 preferablycomprises titanium nitride layer 4 and tungsten layer 6. Junction diode30 is formed on optional titanium nitride barrier layer 8 and comprisesheavily doped semiconductor layer 10 of a first conductivity type, layer12 which is undoped semiconductor material or lightly dopedsemiconductor material of a second conductivity type, and heavily dopedsemiconductor layer 14 of the second conductivity type. A thin silicondioxide antifuse layer 16 is formed on top of the junction diode 30.Second conductor 40 preferably comprises titanium nitride layer 18 andtungsten layer 22.

The memory cell 2 is unprogrammed as formed. To program the cell, avoltage sufficient to cause dielectric breakdown of the antifusematerial is applied across antifuse layer 16.

The term junction diode is used herein to refer to a semiconductordevice with the property of conducting current more easily in onedirection than the other, having two terminal electrodes, and made ofsemiconducting material which is p-type at one electrode and n-type atthe other. Examples include p-n diodes and n-p diodes, which have p-typesemiconductor material and n-type semiconductor material in contact, andp-i-n and n-i-p diodes, in which intrinsic (undoped) semiconductormaterial is interposed between p-type semiconductor material and n-typesemiconductor material.

The cell of FIG. 1 is formed in an initial high-impedance state in whichno or a very small level of current flows between the conductors when aread voltage is applied. After application of a programming voltage, thecell converts to a low-impedance state in which a significantlyincreased level of current flows between conductors upon application ofthe same read voltage. It has been assumed that the presence of thedielectric rupture antifuse prevented current flow in the unprogrammedcell, and that the change to lower impedance after programming was duelargely or solely to dielectric breakdown of this dielectric ruptureantifuse.

In embodiments of the present invention, however, the memory cell ofembodiments of the '470 application has been modified by omitting thedielectric rupture antifuse. It has been found that the resulting memorycell exhibits the same behavior: As formed, the cell is in an initialhigh-impedance state with little or no current flow, and afterapplication of a programming voltage, the cell is in a low-impedancestate with significantly increased current flow.

An example memory cell 3 formed according to the present invention isshown in FIG. 2. The first conductor 20 and junction diode 30 arepreferably formed as the corresponding elements were formed in memorycell 2 of FIG. 1. No dielectric rupture antifuse is formed on junctiondiode 30, however; antifuse layer 16 of FIG. 1 is omitted. Secondconductor 40 is formed on and in contact with junction diode 30.

FIG. 3 is a probability plot showing current between conductors inmemory cells like the cell shown in FIG. 2 before and after applicationof a programming voltage. In this example the diameter of junction diode30 is about 0.15 micron. When a read voltage of 2.0 volts was appliedbetween first conductor 20 and second conductor 40, the current flowingbetween conductors 20 and 40, shown on curve A, ranged between about1×10⁻⁸ amps and about 3.5×10⁻⁸ amps; the median current was about 2×10⁻⁸amps. This is the unprogrammed or leakage current. After application ofa programming pulse of about 8 volts between conductors 20 and 40, whenthe same read voltage is applied between first conductor 20 and secondconductor 40, the current flowing between conductors 20 and 40, shown oncurve B, ranged between about 3×10⁻⁵ and about 8×10⁻⁵ amps; the mediancurrent was about 6×10⁻⁵ amps. This is the programmed or forwardcurrent.

In this example the difference between the programmed and unprogrammedcurrent is more than three orders of magnitude. It is preferred for amemory cell for the difference between programmed and unprogrammedcurrent to be at least two orders of magnitude. Such a difference allowsprogrammed and unprogrammed state of the cell to be reliablydistinguishable. Clearly a larger difference between the programmed andthe unprogrammed current makes reliable sensing of the state of the celleasier.

It is also useful to consider current density flowing through the diode,the current flow per unit area of a cross-section of the diode. Asnoted, in this instance the diameter of junction diode 30 is about 0.15micron. Due to etching effects, the sides of junction diode 30 tend toslope inward; thus the diameter at the top of junction diode 30 is about0.1 micron, for an area of about 7.85×10⁻³ micron. The current densityat the top of the diode upon application of a read voltage of about 2.0volts before programming is thus between about 1.3×10⁻⁶ amp/micron² andabout 4.4×10⁻⁶ amp/micron² with a median of about 2.5×10⁻⁶ amp/micron²,while the current density at the top of the diode upon application ofthe same read voltage after programming is between about 3.8×10⁻³amp/micron² and about 1.0×10⁻² amp/micron², with a median of about7.639×10⁻³ amp/micron².

In the example of FIG. 2, junction diode 30 is formed of semiconductormaterial, typically polysilicon. Other semiconductor materials, forexample germanium or silicon-germanium alloys, could be used instead.Specifically, the '577 application filed on even date herewith describesa junction diode formed having different semiconductor compositions indifferent parts of the diode. In preferred embodiments, for example, thejunction diode comprises silicon and germanium; the bottom heavily dopedregion of a first conductivity type and the top heavily doped region ofa second conductivity type each has a higher ratio of silicon togermanium than does the center lightly doped or intrinsic region. Adiode according to the '577 application might advantageously be disposedbetween conductors without a dielectric antifuse and used as a memorycell according to the present invention.

In the embodiment described, the vertical semiconductor pillar has atleast one region of a first conductivity type and at least one region ofa second, opposite conductivity type, and functions as a junction diode.In other embodiments, the semiconductor pillar could have regions of afirst conductivity type or of a second conductivity type only, but notboth, and function as a resistor.

Aspects of the present invention provide for a semiconductor pillardisposed between a top and a bottom conductor wherein the portion of thetop conductor and of the bottom conductor that actually contact thesemiconductor pillar are not formed of semiconductor material. In theembodiment shown in FIG. 2, for example, the semiconductor pillar 30contacts bottom conductor 20 at barrier layer 8 (which is preferablytitanium nitride), and contacts top conductor 40 at adhesion layer 18(also preferably titanium nitride.)

As described in the '470 application, titanium nitride barrier layer 8can be patterned either with bottom conductor 20 or with junction diode30. Which patterning step is used to shape barrier layer 8 has noapparent effect on device performance. Barrier layer 8 is formed ofconductive material, is not formed of semiconductor material, is inphysical and electrical contact with bottom conductor 20 and iselectrically continuous with it; thus it will be considered to be partof bottom conductor 20.

Petti et al., U.S. application Ser. No. 10/728,230, “SemiconductorDevice Including Junction Diode Contacting Contact-Antifuse UnitComprising Silicide,” filed Dec. 3, 2003, hereby incorporated byreference and hereinafter the '230 application, includes an embodimentof a cell used in a monolithic three dimensional memory array; the cellis shown in FIG. 4 a. In this embodiment, layer 52 of bottom conductor20 is formed of polysilicon (in this discussion the term “polysilicon”will be used to describe polycrystalline silicon), then polysiliconlayer 52 is patterned and etched to form substantially parallel rails,shown extending across the page from left to right. Dielectric material(not shown) is deposited between and over adjacent rails, and then theexcess dielectric material removed to expose the tops of polysiliconrails 52, forming a planarized surface. Cobalt is deposited onpolysilicon rails 52 and the intervening dielectric material, thenannealed to react with underlying polysilicon layer 52, forming cobaltsilicide layer 54 on the polysilicon only. The unreacted cobalt isremoved, leaving cobalt silicide conductor 20. In the '230 application,a silicon dioxide antifuse layer 56 is grown on cobalt silicide layer54. Barrier layer 58 is formed, preferably of titanium nitride.Polysilicon is deposited, then patterned and etched to form junctiondiode pillar 30. Top conductor 40 is formed of titanium nitride layer 18and tungsten layer 22. Top conductor 40 is also formed in a rail shapeand extends in a direction substantially perpendicular to the directionof bottom conductor 20, and thus is here shown in cross section.

A memory cell could be formed according to the present invention inwhich the embodiment of the '230 application shown in FIG. 4 a ismodified by omitting formation of antifuse layer 56. Such a cell isshown in FIG. 4 b. As in the embodiment of FIG. 2, semiconductor pillar30 contacts nonsemiconductor material at both ends. Bottom conductor 20comprises polysilicon layer 52, but the layer actually contacting thesemiconductor pillar 30 is not semiconductor material, but rathertitanium nitride layer 58. At its top end, semiconductor pillar 30contacts titanium nitride layer 18 of top conductor 40. (For simplicityand consistency of description, polysilicon layer 52 and cobalt silicidelayer 54 were together described as bottom conductor 20. In fact cobaltsilicide layer 54 has much lower resistance than polysilicon layer 52,and actually serves as the conductor.) A memory array can be formed byforming a plurality of such cells, and a monolithic three dimensionalmemory array can be formed by stacking levels of such arrays by usingthe methods described in the '230 application, the '470 application, andthe present application.

In the embodiments of the present invention so far described, thesemiconductor pillar is disposed between top and bottom conductors, andis in electrical contact with both top and bottom conductors. For apillar to be “in electrical contact” with a conductor means that nodielectric layer is disposed between it and the conductor. For example,in FIG. 4 a of Petti et al., dielectric layer 56 is disposed betweenpillar 30 and titanium nitride layer 58 (which is in contact with andconsidered part of conductor 20); thus they are not in electricalcontact. In FIG. 4 b, in contrast, no dielectric layer intervenes, andpillar 30 is in electrical contact with conductor 20. Similarly, inmemory cell 3 of FIG. 2, pillar 30 is in electrical contact withconductor 20, as no dielectric layer is disposed between them.

While not wishing to be bound by any particular theory, one possiblemechanism for the change in impedance is that application of aprogramming voltage in some way changes the characteristics of thejunction diode 30, which is typically formed of polycrystalline silicon,changing the resistance of the junction diode 30, which is asemiconductor pillar.

Similar phenomena have been reported by others. For example, Babcock etal., “Polysilicon Resistor Trimming for Packaged Integrated Circuits,”IEDM Technical Digest, 1993, pp. 247-250, describe a change inresistance in polysilicon resistors induced by pulse current trimming.Malhotra et al., “An electrothermal model of memory switching invertical polycrystalline silicon structures,” IEEE Transactions onElectron Devices 33, p. 1514 (1988) explore a possible mechanism for atransition to a low resistance state in polysilicon. Babcock et al.further observe that after resistance of polysilicon resistors has beenlowered by application of a programming pulse, recovery to slightlyhigher resistance can be achieved by applying a second current; thisdecrease and recovery of resistance is repeatable.

It is expected, then, that if the junction diode of the embodimentsdescribed so far is replaced with a resistor, the change in resistancemay be reversible, allowing for a rewriteable memory cell.

A change in the characteristics of the semiconductor of the pillar ismentioned as one possible mechanism. Other mechanisms are also possible,however, and are not intended to be excluded.

To summarize, then, the aspect just described is a programmable memorycell comprising a first conductor extending in a first direction; avertical pillar consisting essentially of semiconductor material andconductivity-enhancing dopants and having a top surface and a bottomsurface; a second conductor above the first conductor extending in asecond direction different from the first direction, wherein thevertical pillar is disposed between the first and second conductors andwherein the top surface and the bottom surface are in electrical contactwith the first and second conductors, and wherein, before programming ofthe memory cell, an unprogrammed current flows between the conductorswhen a read voltage is applied and wherein, after programming of thememory cell, a programmed current flows between the conductors when thesame read voltage is applied, wherein a difference between theunprogrammed and programmed currents is sufficient for an unprogrammedstate and an programmed state of the memory cell to be reliablydistinguishable.

Such a cell can be created by a method comprising forming a firstelongate conductor having a top layer; forming a verticalpolycrystalline or amorphous pillar, the pillar consisting essentiallyof semiconductor material and comprising both an n-doped and a p-dopedregion, the pillar formed over and in electrical contact with the firstconductor; and forming a second conductor over the pillar, the secondconductor having a bottom layer, wherein the pillar is in electricalcontact with the second conductor, wherein the top layer of the firstconductor does not comprise semiconductor material and wherein thebottom layer of the second conductor does not comprise semiconductormaterial.

In preferred embodiments, the pillar is formed by forming a layer stackconsisting essentially of doped semiconductor material and patterningand etching the layer stack to form a semiconductor pillar in electricalcontact with the top layer of the first conductor and in electricalcontact with the second conductor.

It has been observed that a silicide in contact with the pillar seems tochange the resistivity of the polysilicon. In one example, an array ofmemory cells was formed as in FIG. 2, with the difference that titaniumnitride layer 18 was replaced with two layers: the lower layer wastitanium, and the upper layer was titanium nitride. With subsequentthermal processing, the titanium of the lower layer reacted with heavilydoped silicon layer 14 to form titanium silicide. The resulting diodeswere found to be in a low-impedance state as formed, insufficientlydistinguishable from the diodes of a programmed cell, rendering thearray unusable as a memory in which a high-resistivity initial state isrequired.

In general, it is believed that when the semiconductor of the pillar isin immediate contact with a silicide, the resulting diode may below-impedance as formed. While not wishing to be bound by any particulartheory, it may be that formation of the silicide somehow changes thecharacteristics of the semiconductor of the pillar, rendering itlow-impedance as formed. Herner et al., the '510 application, and Pettiet al., both filed on even date herewith, teach memory arrays that use alow-impedance semiconductor pillar formed in contact with a silicide.

Programming and Sensing

This discussion has referred to read voltage and programming voltage.These terms will be described in more detail.

FIG. 5 shows a plot of current vs. voltage (an I-V plot) for a diodeformed according to the present invention. The y-axis (current) islogarithmic, while the x-axis is linear. Curve C shows current for aprogrammed cell and curve D shows current for an unprogrammed cell. Itwill be seen that between voltage V₀ and voltage V₁, the difference incurrent is at its maximum and thus most readily discernible. At voltageshigher than V₁, some unprogrammed cells in an initial high-impedancestate will be converted to a low-impedance, programmed state.

The shape of curve C is typical for the I-V curve of a programmed cell.At lower voltages (below V₀), a very small change in applied voltageresults in a large change in current. At about V₀, an inflection pointis reached, above which current changes only gradually with increasingvoltage. The read voltage is best chosen to be at or above the voltageof this inflection point.

The read voltage should be large enough that the difference inprogrammed current and unprogrammed current is at least two one order ofmagnitude, preferably at least two orders of magnitude, most preferablyat least three orders of magnitude.

A factor to consider in determining read voltage is that a cell may beread many times over the lifetime of the device. A typical requirementfor device reliability is that a cell must retain a programmed orunprogrammed state for ten years of operating life. While a singleapplication of a read voltage may not program a memory cell, theprobability that a cell will inadvertently be programmed by repeatedapplication of read voltage increases with the number of times the cellis read.

While a typical lifetime requirement for a memory in general is aboutten years, the actual time that any single cell in the array is subjectto a read voltage during ten years of operating life of the memory is,of course, very much shorter. In practice, the read voltage should below enough that substantially no unprogrammed cells in the array will beprogrammed after about a million reads. In one particularly stringentexample, a die was considered to have failed if fifteen out of 512million cells were unintentionally programmed during three millionreads. An acceptable industrial standard was for no more than fifty outof one million die to have this rate of failure.

For preferred embodiments of an array of memory cells formed accordingto the present invention, read voltage is between about 0.5 and about 4volts, preferably between about 0.8 and about 3 volts, most preferablybetween about 1 and about 2 volts.

A programming voltage is ideally greater than V₂ in FIG. 5. Severalfactors must be considered when choosing programming voltage. Thevoltage must be sufficient to program substantially any cell in thearray. The voltage must also be sufficient to program any cell in areasonable period of time; in general a lower programming voltage takeslonger to program a cell, while higher programming voltage programs acell faster.

Higher programming voltage is not always better, however: It isgenerally advantageous for programming voltage to be no larger than thatactually required to reliably program the devices, since the chargepumps required to create high voltages consume a large area in thesubstrate. High programming voltage also translates into high powerconsumption, a disadvantage for most consumer electronic devices. Veryhigh voltages may actually damage or destroy cells. For a large numberof memory cells, there will inevitably be some variation; some cellswill program at a lower voltage, some at a higher voltage. Programmingvoltage must be sufficient to reliably program, or convert from ahigh-impedance, unprogrammed state to a low-impedance, programmed state,substantially any cell in an array of cells. Preferably, programmingvoltage should be sufficient to program substantially any unprogrammedcell in the array in no more than about two microseconds. Preferablyprogramming time is no more than about one microsecond, preferably lessthan about 500 nanoseconds, most preferably less than about 350nanoseconds.

For preferred embodiments of an array of memory cells formed accordingto the present invention, programming voltage will range between about 2and about 18 volts, preferably between about 2.5 and about 8 volts, mostpreferably between about 3 and about 5 volts.

Fabrication

The '470 application described fabrication of a monolithic threedimensional memory array comprising memory cells like those of FIG. 1.The procedures described in that application, with omission of the stepof forming the antifuse layer, can be used to fabricate a monolithicthree dimensional memory array comprising memory cells like those ofFIG. 2, formed according to the present invention. An overview offabrication of a monolithic three dimensional memory array according tothe present invention will be provided here. For clarity, not all of thedetails of the '470 application will be included, but it will beunderstood that no teaching of the '470 application, except fordeliberate formation of the dielectric rupture antifuse, is intended tobe excluded.

Turning to FIG. 6 a, formation of the memory begins with a substrate100. This substrate 100 can be any semiconducting substrate as known inthe art, such as monocrystalline silicon, IV-IV compounds likesilicon-germanium or silicon-germanium-carbon, III-V compounds, II-VIIcompounds, epitaxial layers over such substrates, or any othersemiconducting material. The substrate may include integrated circuitsfabricated therein.

An insulating layer 102 is formed over substrate 100. The insulatinglayer 102 can be silicon oxide, silicon nitride, high-dielectric film,Si—C—O—H film, or any other suitable insulating material.

The first conductors 200 are formed over the substrate and insulator. Anadhesion layer 104 may be included between the insulating layer 102 andthe conducting layer 106 to help the conducting layer 106 adhere.Preferred materials for the adhesion layer 104 are tantalum nitride,tungsten nitride, titanium tungsten, sputtered tungsten, titaniumnitride, or combinations of these materials. If the overlying conductinglayer is tungsten, titanium nitride is preferred as an adhesion layer.

If adhesion layer 104 is included, it can be deposited by any processknown in the art. Where adhesion layer 104 is titanium nitride, it candeposited by depositing a titanium nitride material, or by depositingtitanium, which is then subject to a nitridation process. The titaniumnitride can be deposited by any chemical vapor deposition (CVD) process,physical vapor deposition (PVD) process such as sputtering, or an atomiclayer deposition (ALD) process. In one embodiment, the titanium nitridematerial is deposited by a sputtering process.

The thickness of adhesion layer 104 can range from about 20 to about 500angstroms. In one embodiment, the thickness of adhesion layer 104 isabout 200 angstroms. Note that in this discussion, “thickness” willdenote vertical thickness, measured in a direction perpendicular tosubstrate 100.

The next layer to be deposited is conducting layer 106. Conducting layer106 can comprise any conducting material known in the art, includingtantalum, titanium, tungsten, copper, cobalt, or alloys thereof.Titanium nitride may be used. Where conducting layer 106 is tungsten, itcan be deposited by any CVD process or a PVD process. In one embodiment,the tungsten is deposited by a CVD process. The thickness of conductinglayer 106 can depend, in part, on the desired sheet resistance andtherefore can be any thickness that provides the desired sheetresistance. In one embodiment, the thickness of conducting layer 106 canrange from about 200 to about 2000 angstroms. In another embodiment, thethickness of conducting layer 106 is about 1500 angstroms.

If tungsten is used for conducting layer 106, it is preferred to use abarrier layer between the tungsten and the semiconductor material thatwill be part of the semiconductor pillars that will eventually overliethe conductors. Such a barrier layer serves to prevent reaction betweentungsten and silicon. The barrier layer may either be patterned with theconductor rails or with the semiconductor pillars.

If a barrier layer is to be used, and is to be formed as the top layerof the conductor rails, the barrier layer should be deposited after theconducting layer 106. (The barrier layer is not shown in FIG. 6 a.) Anymaterial serving this function can be used in the barrier layer,including tungsten nitride, tantalum nitride, titanium nitride, orcombinations of these materials. In a preferred embodiment, titaniumnitride is used as the barrier layer. Where the barrier layer istitanium nitride, it can be deposited in the same manner as the adhesionlayer described earlier.

Once all the layers that will form the conductor rails have beendeposited, the layers will be patterned and etched using any suitablemasking and etching process to form substantially parallel,substantially coplanar conductors 200, shown in FIG. 6 a incross-section. In one embodiment, photoresist is deposited, patterned byphotolithography and the layers etched, and then the photoresistremoved, using standard process techniques such as “ashing” in anoxygen-containing plasma, and strip of remaining polymers formed duringetch in a liquid solvent such as EKC.

The width of conductor rails 200 after etch can range from about 300 toabout 2500 angstroms. (In this discussion “width” will refer to thewidth of a line or feature measured in the plane substantially parallelto substrate 100.) The width of the gaps between conductor rails 200preferably is substantially the same as the width of conductor rails 200themselves, though it may be greater or less. In one embodiment, thewidth of conductor rails is about 1500 angstroms, as is the width of theintervening gaps.

Next a dielectric material 108 is deposited over and between conductorrails 200. Dielectric material 108 can be any known electricallyinsulating material, such as silicon oxide, silicon nitride, or siliconoxynitride. In a preferred embodiment, silicon oxide is used asdielectric material 108. The silicon oxide can be deposited using anyknown process, such as CVD, or, for example, high density plasma CVD(HDPCVD).

Finally, excess dielectric material 108 on top of conductor rails 200 isremoved, exposing the tops of conductor rails 200 separated bydielectric material 108, and leaving a substantially planar surface 109.The resulting structure is shown in FIG. 6 a. This removal of dielectricoverfill to form planar surface 109 can be performed by any processknown in the art, such as chemical mechanical planarization (CMP) oretchback. For example, the etchback techniques described in Raghuram etal., U.S. application Ser. No. 10/883,417, “Nonselective UnpatternedEtchback to Expose Buried Patterned Features,” filed Jun. 30, 2004 andhereby incorporated by reference in its entirety, can advantageously beused.

Alternatively, conductor rails can be formed by a Damascene process, inwhich oxide is deposited, lines are etched in the oxide, then the linesare filled with titanium nitride and tungsten to create the conductorrails. The titanium nitride and tungsten films on top of the originalplane of oxide are removed by any process known in the art, such as CMPor etchback, leaving titanium nitride and tungsten wires, withdielectric material insulating the wires from one another.

Next, turning to FIG. 6 b, vertical semiconductor pillars will be formedabove completed conductor rails 200. (To save space substrate 100 isomitted in FIG. 6 b; its presence will be assumed.) If a barrier layer110 is to be used between the lower conductor rails and thesemiconductor elements, and has not yet been formed, it will bedeposited as the first layer after planarization of the conductor rails.It can be of any of the materials and deposited in any of the mannersdescribed earlier. Its thickness can be, for example, about 20 to about500 angstroms. The thickness of barrier layer 110 is preferably about200 angstroms.

Next semiconductor material that will be patterned into pillars isdeposited. The semiconductor material can be silicon, silicon-germanium,silicon-germanium-carbon, germanium, or other suitable IV-IV compounds,gallium arsenide, indium phosphide, or other suitable III-V compounds,zinc selinide, or other II-VII compounds, or a combination. Silicon iscommonly used in the industry, so, for simplicity, this description willrefer to the semiconductor material as silicon, but it will beunderstood that other materials may be substituted. In preferredembodiments, polysilicon is used.

In preferred embodiments, the semiconductor pillar is a junction diode,comprising a bottom heavily doped region of a first conductivity typeand a top heavily doped region of a second conductivity type. The middleregion, between the top and bottom regions, is an intrinsic or lightlydoped region of either the first or second conductivity type. FIGS. 7a-7 d illustrate preferred permutations: In the diodes of FIGS. 7 a and7 b, bottom 112 region is P+ (heavily doped p-type silicon), and topregion 116 is N+. In the diodes of FIGS. 7 c and 7 d, bottom region 112is N+ and top region 116 is P+. In FIGS. 7 a and 7 c, middle region 114is N−, while in FIGS. 7 b and 7 d, middle region 114 is P−. The middleregion can intentionally be lightly doped, or it can be intrinsic, ornot intentionally doped. An undoped region will never be perfectlyelectrically neutral, and will always have defects or contaminants thatcause it to behave as if slightly n-doped or p-doped.

To form, for example, the diode of FIG. 7 a, a layer of heavily dopedp-type silicon 112 must be formed. This layer can be formed by anydeposition and doping method known in the art. The silicon can bedeposited and then doped, but is preferably doped in situ by flowing adonor gas providing dopant atoms during deposition of the silicon. In apreferred embodiment, this layer can range from about 100 to about 1000angstroms, preferably 200 angstroms, and have a dopant concentration ofabout 1×10¹⁹ to about 2×10²¹ atoms/cm³, and preferably about 8×10²⁰atoms/cm³.

The next layer 114 will be slightly n-type silicon. This layer canformed by any deposition and doping method known in the art. Thethickness of the lightly doped n-type silicon layer can range from about1000 to about 4000 angstroms, preferably about 2500 angstroms, and havea dopant concentration of about 1×10¹⁵ to about 1×10¹⁸ atoms/cm³, andpreferably 1×10¹⁵ atoms/cm³. In one embodiment, silicon is depositedwithout intentional doping, yet has defects which render it slightlyn-type.

Above this is a layer 116 of heavily doped n-type silicon. The thicknessof the heavily doped n-type silicon can range from about 100 to about2000 angstroms, preferably about 800 angstroms. Note this is thethickness after the device is complete. Some portion of the top of thislayer will be consumed in a subsequent CMP or etchback step, and willthus be thinner in the finished device then as-deposited. In general,about 800 angstroms of silicon will be removed by the planarizing step;thus an extra thickness of 800 angstroms of silicon should be deposited.This layer has a dopant concentration of about 2×10¹⁹ to about 4×10²¹atoms/cm³, preferably about 8×10²⁰ atoms/cm³. It can be doped in situ orby ion implantation. Preferably this layer is doped by ion implantation.

Returning to FIG. 6 b, semiconductor layers 116, 114 and 112 justdeposited will be patterned and etched to form semiconductor pillars300. If barrier layer 110 was not patterned with the bottom conductorrails, it will be patterned with the pillars. Semiconductor pillars 300should have about the same pitch and about the same width as conductors200 below, such that each semiconductor pillar 300 is formed on top of aconductor 200. Some misalignment can be tolerated.

The semiconductor pillars 300 can be formed using any suitable maskingand etching process. For example, photoresist can be deposited,patterned using standard photolithography techniques, and etched, thenthe photoresist removed. Alternatively, a hard mask of some othermaterial, for example silicon dioxide, can be formed on top of thesemiconductor layer stack, with bottom antireflective coating (BARC) ontop, then patterned and etched. Similarly, dielectric antireflectivecoating (DARC) can be used as a hard mask.

The photolithography techniques described in Chen, U.S. application Ser.No. 10/728,436, “Photomask Features with Interior Nonprinting WindowUsing Alternating Phase Shifting,” filed Dec. 5, 2003; or Chen, U.S.application Ser. No. 10/815,312, Photomask Features with ChromelessNonprinting Phase Shifting Window,” filed Apr. 1, 2004, both owned bythe assignee of the present invention and hereby incorporated byreference, can advantageously be used to perform any photolithographystep used in formation of a memory array according to the presentinvention.

The semiconductor pillars so far described form junction diodes, andeach comprises a heavily doped n-type region and a heavily doped p-typeregion. In alternative embodiments, however, the semiconductor pillarscould be formed as resistors, having either n-type regions or p-typeregions, but not both. Bottom, middle, and top regions of a resistor,for example, may be P+, P−, and P+, respectively, or N+, N−, and N+,respectively.

The semiconductor pillars of the present invention are vertical pillarsconsisting essentially of semiconductor material andconductivity-enhancing dopants. As described earlier, the semiconductormaterial is preferably silicon, germanium, or alloys thereof, anddifferent compositions of semiconductors may be found in differentregions of the pillar. Conductivity-enhancing dopants are p-type andn-type dopants, conventionally used to increase the conductivity ofsilicon; p-type dopants include boron and aluminum, while n-type dopantsinclude phosphorus and arsenic. The pillars do not include a dielectriclayer formed by deposition or thermal or plasma oxidation. It will beunderstood that the pillars may include contaminants which willunavoidably be present in a production environment, so long as thesecontaminants do not materially affect the basic properties of thepillar; i.e. its behavior as a junction diode or a resistor.

Dielectric material 108 is deposited over and between the semiconductorpillars 300, filling the gaps between them. Dielectric material 108 canbe any known electrically insulating material, such as silicon oxide,silicon nitride, or silicon oxynitride. In a preferred embodiment,silicon dioxide is used as the insulating material. The silicon dioxidecan be deposited using any known process, such as CVD, or, for example,HDPCVD.

Next the dielectric material on top of the pillars 300 is removed,exposing the tops of pillars 300 separated by dielectric material 108,and leaving a substantially planar surface. This removal of dielectricoverfill can be performed by any process known in the art, such as CMPor etchback. For example, the etchback techniques described in Raghuramet al. can be used. The resulting structure is shown in FIG. 6 b. Ifheavily doped top regions 116 are to be doped using ion implantation,implantation should be performed at this point.

Overlying conductors can be formed in the same manner as the underlyingconductors. The overlying conductors will extend in a differentdirection from the first conductors, preferably substantiallyperpendicular to them. The resulting structure is a bottom or firststory of memory cells.

To summarize, what has just been constructed is an array of memorycells, the array comprising: a plurality of substantially parallel,substantially coplanar first conductors extending in a first direction;a plurality of vertically oriented semiconductor pillars above and inelectrical contact with the first conductors, wherein the pillars do notcomprise a dielectric layer formed by deposition or a thermal or plasmaoxidation or nitridation process exceeding 100 degrees C.; and aplurality of substantially parallel, substantially coplanar secondconductors extending in a second direction different from the firstdirection, the second conductors above and in electrical contact withthe pillars, wherein the first and second conductors and the pillarsform a level of programmable memory cells disposed above a substrate.

Specifically, this array can be created by a method comprising forming aplurality of substantially parallel first conductors; depositing a layerstack consisting essentially of semiconductor material andconductivity-enhancing dopants; patterning and etching the layer stackof semiconductor material to form a plurality of first pillars, eachfirst pillar in electrical contact with a first conductor; and formingsecond conductors above the first pillars, each first pillar inelectrical contact with a second conductor, wherein the array so formedcomprises programmable memory cells.

By continuing to form semiconductor pillars and conductors, furthermemory cells can be built above this first story. Specifically, a secondlevel of pillars can be formed on the second conductors, then thirdconductors (preferably extending in substantially the same direction asthe first conductors) formed on the second pillars. As shown in FIG. 8a, the upper conductors of the lower story of cells L₀ will serve as thelower conductors of an overlying, second story of cells L₁. FIG. 8 b isa cross-sectional view of the same memory array, showing additionallevels L₂ through L₄ formed by continuing to form levels of pillars andconductors, the conductors shared between levels.

Alternatively, the first and second memory levels can be separated bydielectric and not share a level of conductors, as shown in FIG. 9 a.The vertical distance between the first level L₀ and the second level L₁is exaggerated for clarity. FIG. 9 b is a cross-sectional view, showingadditional level L₂ formed by continuing to form levels of pillars andconductors, the conductors not shared between levels.

Ultimately the memory can be several stories high. In a preferredembodiment, the memory can contain from two to twelve stories. Inanother preferred embodiment, the memory contains eight stories.Formation of the memory array just described differed from that of thememory array described in the '470 application in the omission of a stepto form a dielectric rupture antifuse, either deposited or grown byflowing an oxygen- or nitrogen-containing gas at elevated temperature,for example over 100 degrees C. The memory cell does not include anexplicitly formed dielectric rupture antifuse sufficient to affectoperation of the memory cell. Note that during processing, a nativeoxide may spontaneously form at some point in the structure of a memoryarray formed according to the present invention. For example, duringformation of the memory array just described, a CMP step may beperformed to remove dielectric overfill and expose the tops of thesemiconductor pillars. In preferred embodiments, the next step may beion implantation to dope the top regions of the pillars, followed bydeposition of the titanium nitride adhesion layer of the conductors tobe formed atop them. Each of these steps is formed in a different tool.While wafers are transferred from one tool to the next they are exposedto air, and a native oxide will form on the exposed tops of thesemiconductor pillars. This native oxide is insufficient to operate asan effective dielectric rupture antifuse, and a memory array includingsuch an incidentally formed native oxide falls within the scope of thepresent invention. Preferred embodiments have been described in whichthe memory cell is formed having no dielectric antifuse, or having adielectric layer which is not formed by a deliberate deposition oroxidation step. In other embodiments of the present invention, however,it may be desirable to include an intentionally formed dielectricantifuse layer as described in the '470 application. To program such amemory cell, the dielectric antifuse layer must be ruptured and thesemiconductor material of the pillar must be converted from ahigh-impedance state in which it is formed to a low-impedance state.

Such a programmable memory cell comprises a first conductor extending ina first direction; a vertical pillar consisting essentially ofsemiconductor material and conductivity-enhancing dopants and having atop surface and a bottom surface; a second conductor above the firstconductor extending in a second direction different from the firstdirection, wherein the vertical pillar is disposed between the first andsecond conductors, and wherein, before programming of the memory cell,an unprogrammed current flows between the conductors when a read voltageis applied and wherein, after programming of the memory cell, aprogrammed current flows between the conductors when the same readvoltage is applied, wherein a difference between the unprogrammed andprogrammed currents is sufficient for an unprogrammed state and anprogrammed state of the memory cell to be reliably distinguishable. Inpreferred embodiments the semiconductor pillar is not in contact with asilicide.

Monolithic three dimensional memory arrays are described in Johnson etal., U.S. Pat. No. 6,034,882, “Vertically stacked field programmablenonvolatile memory and method of fabrication”; Johnson, U.S. Pat. No.6,525,953, “Vertically stacked field programmable nonvolatile memory andmethod of fabrication”; Knall et al., U.S. Pat. No. 6,420,215, “ThreeDimensional Memory Array and Method of Fabrication”; Herner, U.S.application Ser. No. 10/095,962, “Silicide-Silicon Oxide-SemiconductorAntifuse Device and Method of Making,” filed Mar. 13, 2002; Vyvoda etal., U.S. patent application Ser. No. 10/185,507, “Electrically IsolatedPillars in Active Devices,” filed Jun. 27, 2002; Vyvoda, U.S. patentapplication Ser. No. 10/440,882, “Rail Schottky Device and Method ofMaking”, filed May 19, 2003; and Cleeves et al., “Optimization ofCritical Dimensions and Pitch of Patterned Features in and Above aSubstrate,” U.S patent application Ser. No. 10/728,451, filed Dec. 5,2003, all assigned to the assignee of the present invention and herebyincorporated by reference.

A monolithic three dimensional memory array is one in which multiplememory levels are formed above a single substrate, such as a wafer, withno intervening substrates. The layers forming one memory level aredeposited or grown directly over the layers of an existing level orlevels. In contrast, stacked memories have been constructed by formingmemory levels on separate substrates and adhering the memory levels atopeach other, as in Leedy, U.S. Pat. No. 5,915,167, “Three dimensionalstructure memory.” The substrates may be thinned or removed from thememory levels before bonding, but as the memory levels are initiallyformed over separate substrates, such memories are not true monolithicthree dimensional memory arrays.

The present invention has been described herein in the context of amonolithic three dimensional memory array formed above a substrate. Suchan array comprises at least a first memory level formed at a firstheight above the substrate and a second memory level formed at a secondheight different from the first height. Three, four, eight, or morememory levels can be formed above the substrate in such a multilevelarray.

As appropriate, the methods and devices of the present invention can beused in any of the monolithic three dimensional memory arrays describedin any of the incorporated references, including the '470 and the '230applications.

Detailed methods of fabrication have been described herein, but anyother methods that form the same structures can be used while theresults fall within the scope of the invention.

The foregoing detailed description has described only a few of the manyforms that this invention can take. For this reason, this detaileddescription is intended by way of illustration, and not by way oflimitation. It is only the following claims, including all equivalents,which are intended to define the scope of this invention.

What is claimed:
 1. A programmable memory cell comprising: a firstconductor extending in a first direction; a vertical pillar consistingessentially of semiconductor material and conductivity-enhancing dopantsand having a top surface and a bottom surface; and a second conductorabove the first conductor extending in a second direction different fromthe first direction, wherein: the vertical pillar is disposed betweenthe first and second conductors, the top surface and the bottom surfaceare in electrical contact with the first and second conductors, thevertical pillar comprises a silicon-germanium alloy and has a bottomregion and a center region, the bottom region having a higher ratio ofsilicon to germanium than the center region, no dielectric ruptureantifuse is disposed between the first and second conductors, and theprogrammable memory cell has a high impedance state and conductsunprogrammed current during application of a read voltage and has a lowimpedance state and conducts programmed current after application of aprogramming voltage and then the read voltage.
 2. The memory cell ofclaim 1 wherein the vertical pillar functions as a junction diode. 3.The memory cell of claim 2 wherein the vertical pillar comprises aheavily doped p-type region and a heavily doped n-type region.
 4. Thememory cell of claim 1 wherein the vertical pillar comprises dopedregions of one conductivity type only.
 5. The memory cell of claim 4wherein the vertical pillar functions as a resistor.
 6. The memory cellof claim 1 wherein the read voltage is between about 0.5 volts and about4 volts.
 7. The memory cell of claim 6 wherein the read voltage isbetween about 0.8 volts and about 3 volts.
 8. The memory cell of claim 1wherein the read voltage is between about 1 volt and about 2 volts. 9.The memory cell of claim 1 wherein the memory cell is programmed byapplication of the programming voltage, the programming voltage betweenabout 2 volts and about 18 volts.
 10. The memory cell of claim 9 whereinthe memory cell is programmed by application of the programming voltage,the programming voltage between about 2.5 volts and about 8 volts. 11.The memory cell of claim 10 wherein the memory cell is programmed byapplication of the programming voltage, the programming voltage betweenabout 3 volts and about 5 volts.
 12. The memory cell of claim 1 whereinthe first or the second conductor does not comprise semiconductormaterial.
 13. The memory cell of claim 12 wherein the first or thesecond conductor comprises a metal.
 14. The memory cell of claim 13wherein the first or the second conductor comprises tungsten.
 15. Thememory cell of claim 1 wherein the difference between the unprogrammedcurrent and the programmed current is at least two orders of magnitude.16. The memory cell of claim 15 wherein the difference between theunprogrammed current and the programmed current is at least three ordersof magnitude.
 17. The memory cell of claim 1 wherein the unprogrammedcurrent is less than or equal to about 3.5×10-8 amps.
 18. The memorycell of claim 1 wherein the unprogrammed current density is less than orequal to about 4.4×10-6 amp/micron2.
 19. The memory cell of claim 1wherein the programmed current is more than or equal to about 3×10 5amps.
 20. The memory cell of claim 1 wherein the programmed currentdensity is more than or equal to about 3.82×10-3 amp/micron2.
 21. Thememory cell of claim 1 wherein the semiconductor material is not incontact with a silicide.